Disturb Robust Switching Astroid Curve of C-Shape Cell With Weakly Coupled Synthetic Antiferromagnetic Layer

Switching astroid curve of "C-shape" cell with weakly coupled synthetic antiferomagnetic layer is studied. Micromagnetic model simulation and experimental measurements clearly show that the switching mechanism of this magnetic element strongly depends on the C-type magnetic domain, derived from characteristic shape anisotropy, and strength of interlayer exchange coupling. In particular, weak interlayer exchange coupling changes the switching fields when the large field is applied on hard axis. The obtained astroid curve improves not only the disturbance problems of magnetoresistive random access memory (MRAM) with the easy axis field but also that with the hard axis field