Improved error correction technique for on-wafer lightwave measurements of photodetectors

Author

Debie, P. ; Martens, L. ; Kaiser, D.

Author_Institution

Dept. of Inf. Technol., Ghent Univ., Belgium

Volume

7

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

418

Lastpage

420

Abstract

An accurate correction technique for on-wafer small-signal lightwave measurements of photodetectors is presented. This technique is an improvement of the conventional calibration methods for on-wafer lightwave measurements. Mathematical expressions for the dominant error sources that exist in the measurement system are derived. Experimental results for an InGaAs-InP pin photodiode show a smoother modulation response characteristic when the presented technique is used.<>

Keywords

III-V semiconductors; error correction; gallium arsenide; indium compounds; measurement errors; optical testing; p-i-n photodiodes; photodetectors; InGaAs-InP; InGaAs-InP pin photodiode; accurate correction technique; calibration methods; dominant error sources; error correction technique; measurement system; modulation response characteristic; on-wafer lightwave measurement; on-wafer lightwave measurements; on-wafer small-signal lightwave measurements; photodetectors; Calibration; Error correction; High speed optical techniques; Integrated circuit measurements; Microwave measurements; Optical attenuators; Optical modulation; Photodetectors; Photodiodes; Probes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.376821

Filename

376821