DocumentCode :
765260
Title :
Anisotropy Field Change by Annealing in He+/Ne+ Ion-Implanted Bubble Garnet Films
Author :
Imura, R. ; Ikeda, T. ; Sugita, Y. ; Suzuki, R.
Author_Institution :
Central Research Lab., Hitachi Ltd., Kokubunji
Volume :
1
Issue :
5
fYear :
1985
Firstpage :
564
Lastpage :
565
Abstract :
Bubble garnet films, (YSmLuGd)3 (FeGa)5O12, were implanted with He, N, and Ne ions at 100-200 keV and annealed at 350 to 600°C, and changes in the maximum lattice strain, (¿a/a)max, and in the effective anisotropy field, ¿(Hk-47¿Ms), were measured by double-crystal X-ray diffraction and ferromagnetic resonance. Lattice strain in layers implanted with He, N, and Ne ions decreased monotonically with annealing. The change in anisotropy field initially increases with heat treatment for samples implanted with heavy ion doses, then decreases. This increase was attributed to changes in the saturation magnetization Ms and magnetostriction coefficient ¿111.
Keywords :
Anisotropic magnetoresistance; Annealing; Garnet films; Helium; Lattices; Magnetic field induced strain; Magnetic field measurement; Magnetic resonance; Strain measurement; X-ray diffraction;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1985.4548863
Filename :
4548863
Link To Document :
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