A Novel Dual-Bit MRAM Cell

Author

Ju, Kochan

Author_Institution

MagLabs Inc., San Jose, CA

Volume

42

Issue

10

fYear

2006

Firstpage

2763

Lastpage

2765

Abstract

A new dual-bit magnetic random acess memory (MRAM) cell of astroid switching type is proposed. The dual-bit stack consists of two conventional MRAM cells connected in series. The two cells are identical except that their cell geometry, anisotropy, and pinned or reference layer orientations are orthogonal to each other. A write scheme is proposed by using the word line and bit line current polarities to write the dual-bit pattern simultaneously. This method doubles the write speed as well as minimizes the writing window margin reduction

Keywords

magnetic storage; magnetic tunnelling; random-access storage; MRAM cell; astroid switching; bit line current polarities; dual-bit magnetic random access memory; magnetic tunnel junction; memory technology; reference layer orientations; word line current polarities; write speed; writing window margin reduction.; Anisotropic magnetoresistance; Los Angeles Council; Magnetic anisotropy; Magnetic switching; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy; Random access memory; Switches; Writing; Magnetic random access memory (MRAM); magnetic tunnel junction (MTJ) memory; memory technology;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.878867

Filename

1704431