DocumentCode
76536
Title
Low-Leakage TiO 
Nanowire Dielectric MOS Device Using Ag Schottky Gate Contact
Author
Dhar, J.C. ; Mondal, Aniruddha ; Singh, Neeraj Kumar ; Chinnamuthu, P.
Author_Institution
Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol. Agartala, Agartala, India
Volume
12
Issue
6
fYear
2013
fDate
Nov. 2013
Firstpage
948
Lastpage
950
Abstract
We have demonstrated the advantage of using a Schottky gate contact and TiO2 nanowire (NW) high- k dielectric in MOS device and silver as the gate electrode. The glancing angle deposited TiO2 NW when used as the gate dielectric over the thin film (TF) significantly improved the electrical characteristics in terms of low Dit (4.17 × 1010 cm-2·eV-1) and low leakage current (8.8 × 10-7A/cm 2) at +1 V bias.
Keywords
MIS devices; Schottky barriers; dielectric devices; high-k dielectric thin films; leakage currents; nanoelectronics; nanowires; semiconductor thin films; silver; titanium compounds; Ag; NW high-k dielectric; Schottky gate contact; TF; TiO2; electrical characteristics; gate dielectric; gate electrode; glancing angle deposited NW; low leakage current; low-leakage nanowire dielectric MOS device; thin film; voltage 1 V; Capacitance; Dielectrics; Leakage currents; Logic gates; MOS devices; Nanoscale devices; Silicon; Glancing angle deposition (GLAD); MOS; Schottky contact; TiO$_{2}$
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2013.2277600
Filename
6576273
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