DocumentCode
76547
Title
Improving Current Controllability in Bi-Mode Gate Commutated Thyristors
Author
Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Vemulapati, Umamaheswara ; Arnold, Martin ; Nistor, Iulian ; Vobecky, Jan ; Rahimo, Munaf
Author_Institution
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
Volume
62
Issue
7
fYear
2015
fDate
Jul-15
Firstpage
2263
Lastpage
2269
Abstract
The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.
Keywords
semiconductor device models; thyristors; 2D mixed mode model; bimode gate commutated thyristors; current controllability; full wafer device simulations; reverse conducting gate commutated thyristor; Anodes; Cathodes; Integrated circuit modeling; Logic gates; Semiconductor device modeling; Semiconductor diodes; Thyristors; Full wafer modeling; gate commutated thyristor (GCT); maximum controllable current (MCC); safe operating area; thyristor; thyristor.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2428994
Filename
7112118
Link To Document