Kirk effect in bipolar transistors with a nonuniform dopant profile in the collector

Author

Elias, D. Cohen ; Ritter, D.

Author_Institution

Dept. of Electr. Eng., Technion, Haifa, Israel

Volume

27

Issue

1

fYear

2006

Firstpage

25

Lastpage

27

Abstract

We have calculated the threshold current density of the Kirk effect in bipolar transistors with a nonuniform doping concentration in the collector. The threshold current is enhanced by more than 50% compared to the uniform doping case if the dopant profile is weighed toward the base and if velocity overshoot is small. Significant velocity overshoot restores the threshold value obtained with uniform doping.

Keywords

current density; doping profiles; heterojunction bipolar transistors; semiconductor doping; Kirk effect; bipolar junction transistors; double heterojunction bipolar transistors; nonuniform dopant profiles; threshold current density; velocity overshoot; Bipolar transistors; Current density; Doping profiles; Double heterojunction bipolar transistors; Electrons; Heterojunction bipolar transistors; Kirk field collapse effect; Quasi-doping; Threshold current; Voltage; Bipolar junction transistors (BJTs); Kirk effect; double heterojunction bipolar transistor (DHBT); heterojunction bipolar transistor (HBT); quasi-doping;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.861401

Filename

1561444