Effect of Magnetic Bias on Nonlinear Scattering by Stacked Semiconductor Layers

Author

Shramkova, O.V.

Author_Institution

Sch. of Electron., Electr. Eng. & Comput. Sci., Queen´s Univ. Belfast, Belfast, UK

Volume

3

Issue

6

fYear

2013

fDate

Nov. 2013

Firstpage

798

Lastpage

804

Abstract

The properties of the three-wave interaction and wave scattering by periodic stacks of nonlinear semiconductor layers with external magnetic bias have been explored, taking into account the nonlinear charge dynamics. It has been shown that the mixing processes in magnetoactive semiconductor structures are enhanced by the magnetic bias and the combinations of layer physical and geometrical parameters. The effects of magnetic bias on nonreciprocity of combinatorial frequency generation are discussed.

Keywords

magnetic semiconductors; multiwave mixing; semiconductor thin films; combinatorial frequency generation; geometrical parameters; magnetic bias; magnetoactive semiconductor structures; mixing; nonlinear charge dynamics; nonlinear scattering; nonreciprocity; stacked semiconductor layers; three wave interaction; wave scattering; Magnetic multilayers; Magnetic resonance; Magnetic semiconductors; Magnetoacoustic effects; Metamaterials; Periodic structures; Combinatorial frequency generation; magnetic field; nonlinear periodic structure; nonlinear semiconductor; nonreciprocity; three-wave mixing;

fLanguage

English

Journal_Title

Terahertz Science and Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-342X

Type

jour

DOI

10.1109/TTHZ.2013.2286259

Filename

6651747