Title :
A fast measurement technique of MOSFETI/sub d/-V/sub g/ characteristics
Author :
Shen, C. ; Li, M.-F. ; Wang, X.P. ; Yee-Chia Yeo ; Kwong, D.-L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
We developed an improved ultrafast measurement method for threshold voltage V/sub th/ measurement of MOSFETs. We demonstrate I/sub d/--V/sub g/ curve measurement within 1 μs to extract the threshold voltage of MOSFET. Errors arising from MOSFET parasitics and measurement setup are analyzed quantitatatively. The ultrafast V/sub th/ measurement is highly needed in the investigation of gate dielectric charge trapping effect when traps with short detrapping time constants are present. Application in charge trapping measurement on HfO2 gate dielectric is demonstrated.
Keywords :
MOSFET; dielectric materials; electric current measurement; electron traps; hafnium compounds; high-speed techniques; semiconductor device measurement; voltage measurement; HfO/sub 2/; MOSFET measurement; charge trapping measurement; current-voltage curve measurement; gate dielectric charge trapping effect; semiconductor device measurements; threshold voltage measurement; ultrafast measurement method; Charge measurement; Current measurement; Delay; Dielectric measurements; MOSFET circuits; Measurement techniques; Pulse measurements; Stress measurement; Threshold voltage; Time measurement; CMOSFETs; reliability; semiconductor device measurements; trapping;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.861025
