Wavelength tuning of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion

Author

Burkner, S. ; Ralston, J.D. ; Weisser, S. ; Rosenzweig, J. ; Larkins, E.C. ; Sah, R.E. ; Fleissner, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

Volume

7

Issue

9

fYear

1995

Firstpage

941

Lastpage

943

Abstract

The impurity-free interdiffusion technique has been utilized to modify the operating wavelength of high-speed In/sub 0.3G/a/sub 0.65/As-GaAs multiple quantum well lasers. Modulation bandwidths of up to 26 GHz (I/sub bias/=50 mA) and modulation current efficiency factors of 5 GHz/mA¹2/ are demonstrated for 3×100 μm² ridge waveguide lasers following wavelength shifts of 32 nm (34 meV). These results demonstrate the feasibility of fabricating monolithic multiple wavelength laser arrays in which each element is capable of low-bias-current direct modulation at bandwidths exceeding 20 GHz.

Keywords

III-V semiconductors; aluminium compounds; chemical interdiffusion; electro-optical modulation; gallium arsenide; indium compounds; integrated optoelectronics; laser tuning; quantum well lasers; semiconductor laser arrays; waveguide lasers; 26 GHz; 34 meV; 50 mA; In/sub 0.3G/a/sub 0.65/As-GaAs multiple quantum well lasers; InGaAs-GaAs-AlGaAs; high-speed; impurity-free interdiffusion; low-bias-current direct modulation; modulation bandwidths; modulation current efficiency factors; monolithic multiple wavelength laser arrays; operating wavelength; pseudomorphic MQW lasers; ridge waveguide lasers; wavelength shifts; wavelength tuning; Bandwidth; Dielectrics; Fiber lasers; Laser tuning; Optical arrays; Photonic band gap; Quantum well devices; Quantum well lasers; Semiconductor laser arrays; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.414662

Filename

414662