• DocumentCode
    765805
  • Title

    Measurement and analysis of small-signal drain admittance in SOS MOSFETs

  • Author

    Howes, R. ; Redman-White, William

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Southampton Univ., UK
  • Volume
    27
  • Issue
    24
  • fYear
    1991
  • Firstpage
    2290
  • Lastpage
    2292
  • Abstract
    Frequency dependence of the saturated drain admittance in SOS MOSFETs is reported. Using a new small-signal model, this behaviour is explained by the variation of the floating substrate voltage, and similar effects are expected in SOI. The admittance is shown to be a strong function of gate and drain biases and device geometry. Frequency dependent thermal effects are also reported.
  • Keywords
    MOS integrated circuits; equivalent circuits; insulated gate field effect transistors; semiconductor device models; SOS MOSFETs; Si-Al 2O 3; device geometry; drain biases; floating substrate voltage; frequency dependent thermal effects; gate bias; saturated drain admittance; small-signal drain admittance; small-signal model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911416
  • Filename
    109539
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=765805