Title :
Measurement and analysis of small-signal drain admittance in SOS MOSFETs
Author :
Howes, R. ; Redman-White, William
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
Frequency dependence of the saturated drain admittance in SOS MOSFETs is reported. Using a new small-signal model, this behaviour is explained by the variation of the floating substrate voltage, and similar effects are expected in SOI. The admittance is shown to be a strong function of gate and drain biases and device geometry. Frequency dependent thermal effects are also reported.
Keywords :
MOS integrated circuits; equivalent circuits; insulated gate field effect transistors; semiconductor device models; SOS MOSFETs; Si-Al 2O 3; device geometry; drain biases; floating substrate voltage; frequency dependent thermal effects; gate bias; saturated drain admittance; small-signal drain admittance; small-signal model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911416
