Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb ‘W’-Type QW Laser on InP Substrate

Author

Chia-Hao Chang ; Zong-Lin Li ; Hong-Ting Lu ; Chien-Hung Pan ; Chien-Ping Lee ; Lin, G. ; Sheng-Di Lin

Author_Institution

Dept. of Electrics Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

27

Issue

3

fYear

2015

fDate

Feb.1, 1 2015

Firstpage

225

Lastpage

228

Abstract

The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35 μm exhibits a low-threshold current density at infinite cavity length of 83 A/cm² per QW under pulsed operation at room temperature. The internal loss α_i and internal quantum efficiency η_i of the laser are 17.5 cm^-1 and 15%, respectively.

Keywords

III-V semiconductors; current density; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical losses; quantum well lasers; InGaAs-GaAsSb; InP; InP substrate; InP-based InGaAs/GaAsSb W-type quantum wells; Sb-free separate confined layer; electrically driven short-wavelength infrared semiconductor laser; infinite cavity length; internal loss; internal quantum efficiency; laser lasing; low-threshold current density; low-threshold short-wavelength infrared InGaAs/GaAsSb W-type QW laser; pulsed operation; room temperature; temperature 293 K to 298 K; wavelength 2.35 mum; Cavity resonators; Indium gallium arsenide; Quantum well lasers; Strain; Substrates; ‘W’-type quantum wells; ???W???-type quantum wells; InAlGaAs separate confined layer; InP-based; short-wavelength infrared;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2362151

Filename

6933874