Influence of the device-width on the accuracy of quantization in the integer quantum Hall effect

Author

Jeanneret, B. ; Jeckelmann, B. ; Bühlmann, H.J. ; Houdré, R. ; Ilegems, M.

Author_Institution

Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland

Volume

44

Issue

2

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

254

Lastpage

257

Abstract

Using a cryogenic current comparator bridge, several Hall bar samples of different widths were compared to check whether size effects may deteriorate the accuracy of quantization in the integer quantum Hall effect. No width dependence of the quantized Hall resistance was observed in the range from 1 mm down to 10 μm. The difference between the quantized Hall resistances of the i=2 and i=4 plateaus of the various samples was found to be smaller than the measurement uncertainty which is typically less than 1 part in 10⁹

Keywords

III-V semiconductors; aluminium compounds; bridge circuits; cryogenic electronics; current comparators; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; 1 mm to 10 mum; GaAs-AlGaAs; GaAs/AlGaAs; Hall bar samples; accuracy of quantization; cryogenic current comparator bridge; integer quantum Hall effect; measurement uncertainty; quantization; size effects; width dependence; Bridges; Cryogenics; Gallium arsenide; Hall effect; MOSFET circuits; Magnetic devices; Measurement uncertainty; Metrology; Quantization; Quantum mechanics;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.377824

Filename

377824