• DocumentCode
    766759
  • Title

    Material, device, and step independence of the quantized Hall resistance

  • Author

    Jeckelmann, B. ; Inglis, A.D. ; Jeanneret, B.

  • Author_Institution
    Swiss Federal Office of Metrol., Wabern, Switzerland
  • Volume
    44
  • Issue
    2
  • fYear
    1995
  • fDate
    4/1/1995 12:00:00 AM
  • Firstpage
    269
  • Lastpage
    272
  • Abstract
    We report comprehensive high-precision direct and indirect comparisons of quantized Hall resistances in MOSFET and GaAs heterostructures, for steps 1, 2, 3, 4, 6, and 8. We find no evidence for a step, sample-source, or material dependence of the quantized Hall resistance at the level of 3.5 parts in 1010
  • Keywords
    III-V semiconductors; MOSFET; elemental semiconductors; gallium arsenide; measurement standards; quantum Hall effect; semiconductor heterojunctions; silicon; units (measurement); GaAs; GaAs heterostructures; Si; Si MOSFET; cryogenic current comparator; measurement standards; quantized Hall resistance; step independence; units; Electric resistance; Electrical resistance measurement; Electrons; Gallium arsenide; Hall effect; Helium; MOSFET circuits; Particle measurements; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/19.377828
  • Filename
    377828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=766759