Title :
A fully integrated SOI RF MEMS technology for system-on-a-chip applications
Author :
Guan, Lingpeng ; Sin, Johnny K O ; Liu, Haitao ; Xiong, Zhibin
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
In this paper, a silicon-on-insulator (SOI) radio-frequency (RF) microelectromechanical systems (MEMS) technology compatible with CMOS and high-voltage devices for system-on-a-chip applications is experimentally demonstrated for the first time. This technology allows the integration of RF MEMS switches with driver and processing circuits for single-chip communication applications. The SOI high-voltage device (0.7-μm channel length, 2-μm drift length, and over 35-V breakdown voltage), CMOS devices (0.7-μm channel length and 1.3/-1.2 V threshold voltage), and RF MEMS capacitive switch (insertion loss 0.14 dB at 5 GHz and isolation 9.5 dB at 5 GHz) are designed and fabricated to show the feasibility of building fully integrated RF systems. The performance of the fabricated RF MEMS capacitive switches on low-resistivity and high-resistivity SOI substrates will also be compared.
Keywords :
CMOS integrated circuits; micromechanical devices; microswitches; radiofrequency integrated circuits; silicon-on-insulator; system-on-chip; -1.2 V; 0.14 dB; 0.7 micron; 1.3 V; 5 GHz; CMOS devices; SOI RF MEMS technology; capacitive switch; fully integrated RF systems; high-voltage device; microelectromechanical systems; silicon-on-insulator radiofrequency MEMS technology; single-chip communication application; system-on-a-chip; CMOS technology; Communication switching; Integrated circuit technology; Microelectromechanical systems; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Silicon on insulator technology; Switches; System-on-a-chip; CMOS; high-voltage device; radio-frequency (RF) microelectromechanical systems (MEMS) capacitive switch; silicon-on-insulator (SOI); system-on-a-chip;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.860638
