Effect of Magnetic Field on the Magnetic Domain Structure of MnAs Film on GaAs

Author

Kim, Jin Bae ; Lee, Y.P. ; Ryu, Kwang Sun ; Shin, S.C. ; Akinaga, Hiroyuki ; Kim, Kwan Weon

Author_Institution

Quantum Photonic Sci. Res. Center & Dept. of Phys., Hanyang Univ., Seoul

Volume

42

Issue

10

fYear

2006

Firstpage

3249

Lastpage

3251

Abstract

We have observed the magnetic domain evolution under an external magnetic field in an epitaxial MnAs film on GaAs(001) by magnetic force microscopy. Owing to the strain involved, the ferromagnetic alpha-MnAs and the paramagnetic beta-MnAs phases coexist as self-aligned stripes at room temperature. It was found that a complex magnetic domain structure appeared in the ferromagnetic alpha-phase region at the demagnetized state (H=0 Oe). As the magnetic field increased, the magnetic domain structure was gradually changed, and reached a completely saturated state at H=600 Oe. Especially, at H=300 Oe, the observed magnetic domain wall distribution is well matched with the topographical shape

Keywords

III-V semiconductors; arsenic alloys; gallium arsenide; magnetic domain walls; magnetic epitaxial layers; magnetic force microscopy; manganese alloys; GaAs; MnAs; magnetic domain structure; magnetic domain wall distribution; magnetic field effect; magnetic force microscopy; magnetic thin films; Demagnetization; Gallium arsenide; Magnetic domain walls; Magnetic domains; Magnetic field induced strain; Magnetic films; Magnetic force microscopy; Magnetic forces; Paramagnetic materials; Temperature; Magnetic domains; magnetic force microscopy; magnetic thin films;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.878404

Filename

1704589