Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemical vapour deposition

Author

Tatebayashi, J. ; Hatori, N. ; Kakuma, H. ; Ebe, H. ; Sudo, H. ; Kuramata, A. ; Nakata, Y. ; Sugawara, M. ; Arakawa, Y.

Author_Institution

Nanoelectronics Collaborative Res. Center, Univ. of Tokyo, Japan

Volume

39

Issue

15

fYear

2003

fDate

7/24/2003 12:00:00 AM

Firstpage

1130

Lastpage

1131

Abstract

Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers grown by metal organic chemical vapour deposition is reported. Continuous-wave lasing at room temperature with low threshold current (6.7 mA) was achieved at the wavelength of 1.18 μm. The threshold current of 6.7 mA is the lowest value so far achieved in quantum dot lasers grown by metal organic chemical vapour deposition. Comparison with photoluminescence spectra indicates that the observed lasing originates from the ground state of InAs quantum dots.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; ground states; indium compounds; photoluminescence; quantum dot lasers; self-assembly; semiconductor quantum dots; 1.18 micron; 6.7 mA; InAs quantum dot ground state; InAs-GaAs; continuous-wave lasing; low threshold current operation; metal organic chemical vapour deposition; photoluminescence spectra; room temperature; self-assembled InAs/GaAs quantum dot lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030750

Filename

1222688