Title :
A Bubble Generation Mechanism for Ion-Implanted Bubble Devices
Author_Institution :
Microelectronics Research Labs., NEC Corporation.
Abstract :
A new mechanism of bubble generation in ion-implanted bubble devices has been proposed based on minimum generation current characteristies. This model shows that bubble nucleation requires a 180° magnetic wall shift in the transition layer between the ion-implanted and bubble layers which can be used to logically explain bubble generation in ion-implanted devices.
Keywords :
Anisotropic magnetoresistance; Character generation; Circuits; Conductive films; Magnetic fields; Magnetization; Microelectronics; National electric code; Pulse generation; Space vector pulse width modulation;
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
DOI :
10.1109/TJMJ.1985.4549090
