DocumentCode
767700
Title
Inside view of substrate engineering and its future
Author
Todi, R.M. ; Sood, S.
Volume
26
Issue
1
fYear
2007
Firstpage
36
Lastpage
39
Abstract
SOI is a substrate engineered by placing a thin insulating layer, such as silicon oxide or glass, between a thin layer of silicon and the silicon substrate. By offering an opportunity to deliver higher speed and also lowering power consumption, SOI has extended the track for the industry to keep chasing Moore´s law. In this article, we attempt to present the current status and future perspectives of SOI technology
Keywords
power consumption; semiconductor technology; silicon-on-insulator; substrates; Moore´s law; SOI; power consumption; silicon on insulator; substrate; thin insulating layer; Charge carriers; Hydrogen; Ion implantation; MOSFETs; Manufacturing; Parasitic capacitance; Silicon; Stacking; Substrates; Wafer bonding;
fLanguage
English
Journal_Title
Potentials, IEEE
Publisher
ieee
ISSN
0278-6648
Type
jour
DOI
10.1109/MP.2007.343039
Filename
4147711
Link To Document