Fabrication of very high quantum efficiency planar InGaAs PIN photodiodes through prebake process

Author

Chang, S.-H. ; Fang, Yean-Kuen ; Ting, S.-F. ; Chen, S.-F. ; Lin, C.-Y. ; Lin, C.S. ; Wu, C.-Y.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

152

Issue

6

fYear

2005

Firstpage

637

Lastpage

640

Abstract

The fabrication is reported of large-area (73 /spl mu/m in diameter) front-illuminated planar InGaAs PIN photodiodes on S-doped InP substrates through the prebake process and investigations are made of various Zn diffusion times on a 2.9-/spl mu/m thick absorption layer. As a result of the best tuning of the Zn diffusion time, the large-area planar InGaAs PIN photodiodes achieve a lowest capacitance of 0.43 pF, a lowest dark current of 39 pA, a highest responsivity of 0.99 A/W (79% quantum efficiency) at /spl lambda/=1.55 /spl mu/m, and a highest 3-dB bandwidth of 6.98 GHz for a bare chip and 4.53 GHz for the device packaged in a TO can, respectively. Furthermore, the developed PIN photodiodes possess high breakdown voltage (less than -25 V) and provide the P and N electrodes located at different sides of the photodiodes, thus improving the devices for easy bonding and packaging.

Keywords

III-V semiconductors; MOCVD coatings; gallium arsenide; indium compounds; p-i-n photodiodes; zinc; 0.43 pF; 1.55 micron; 2.9 micron; 39 pA; 4.53 GHz; 6.98 GHz; 73 micron; InGaAs; Zn; Zn diffusion times; absorption layer; breakdown voltage; capacitance; dark current; large-area front-illuminated photodiodes; planar PIN photodiodes; prebake process; quantum efficiency;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds.20045178

Filename

1561697