DocumentCode
768436
Title
Spin dependent recombination: a 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface
Author
Jupina, M.A. ; Lenahan, P.M.
Author_Institution
Pennsylvania State Univ., Philadelphia, PA, USA
Volume
37
Issue
6
fYear
1990
fDate
12/1/1990 12:00:00 AM
Firstpage
1650
Lastpage
1657
Abstract
The spin-dependent recombination (SDR) technique is used to observe the 29Si hyperfine spectra of radiation-induced Pb centers at the Si/SiO2 interface in a MOSFET. The Pb center is a paramagnetic, trivalent silicon defect that is the dominant radiation-induced interface state. The 29Si hyperfine spectra give detailed atomic scale information about the Pb center. The SDR results show that the 29 Si hyperfine spectra vary with surface potential. This result indicates that differences in the defect´s local geometry lead to substantial differences in the defect´s energy level. However, the 29Si hyperfine spectra are found to be relatively independent of the ionizing radiation dosage
Keywords
crystal hyperfine field interactions; elemental semiconductors; gamma-ray effects; insulated gate field effect transistors; interface electron states; paramagnetic resonance of defects; semiconductor-insulator boundaries; silicon; silicon compounds; surface potential; 29Si hyperfine spectra; ESR; MOSFET; Si-SiO2 interface; atomic scale information; defect local geometry; energy level; gamma irradiation; ionizing radiation dosage; paramagnetic trivalent defects; radiation-induced Pb centers; radiation-induced interface state; spin-dependent recombination; surface potential; Atomic measurements; Bonding; Capacitive sensors; Electrons; Energy states; Extraterrestrial measurements; Interface states; Paramagnetic materials; Paramagnetic resonance; Silicon;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.101174
Filename
101174
Link To Document