High-frequency annealing effects on ionizing radiation response of MOSFET

Author

Okabe, Takeaki ; Kato, Masataka ; Katsueda, Mineo ; Kamimura, Hiroshi ; Takei, Ichiro

Author_Institution

Hitachi Ltd., Tokyo, Japan

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1670

Lastpage

1676

Abstract

The effects of high-frequency AC bias on the ionizing radiation response of MOSFETs are studied. Radiation-induced interface traps are annealed out during irradiation and postirradiation annealing when an AC bias is applied with a zero offset voltage. In addition, the recovery of 40-MHz-biased devices agreed with that of 860-MHz-biased ones for the same total number of alternating cycles of AC gate bias voltage. It is concluded that an alternating transition between inversion and accumulation caused by high-frequency AC bias is responsible, and the total number of transition cycles may be relevant for the annealing of radiation-induced interface traps

Keywords

annealing; gamma-ray effects; insulated gate field effect transistors; interface electron states; semiconductor device testing; 40 MHz; 860 MHz; MOSFET; accumulation; alternating transition; gamma irradiation; high-frequency AC bias; interface traps; inversion; ionizing radiation response; postirradiation annealing; transition cycles; zero offset voltage; Aging; Annealing; Ionizing radiation; Laboratories; MOS capacitors; MOS devices; MOSFET circuits; Power MOSFET; Radio frequency; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101175

Filename

101175