Separation of radiation induced and process induced lateral non-uniformities MOSFET

Author

Xapsos, M.A. ; Freitag, R.K. ; Dozier, C.M. ; Brown, D.B. ; Summers, G.P. ; Burke, E.A. ; Shapiro, P.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1677

Lastpage

1681

Abstract

Fast measurements of channel current versus gate voltage (I -V) were performed on irradiated MOSFETs as a function of time and temperature after pulsed proton irradiation. Stretchout of the I-V curves due to lateral nonuniformities (LNUs) in the hole distribution in the oxide is shown to be experimentally separable from stretchout due to interface traps. The stretchout due to LNUs is then shown to consist of two experimentally separable components-one due to the random production of holes by the radiation, and one due to the random distribution of hole traps in the oxide. This suggests an entirely new approach for evaluating the quality of oxides in terms of the microscopic uniformity of the processing

Keywords

hole traps; insulated gate field effect transistors; interface electron states; proton effects; semiconductor device testing; I-V characteristics; MOSFET; MOSFETs; channel current versus gate voltage; hole distribution; hole traps; interface traps; lateral nonuniformities; microscopic processing uniformity; oxide quality; pulsed proton irradiation; stretchout; Current measurement; MOSFETs; Microscopy; Performance evaluation; Production; Protons; Pulse measurements; Temperature; Time measurement; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101176

Filename

101176