Effect of radiation-induced charge on 1/f noise in MOS devices

Author

Meisenheimer, T.L. ; Fleetwood, D.M.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1696

Lastpage

1702

Abstract

The 1/f noise in MOS transistors is measured as a function of gate and drain bias, total ionizing dose, and postirradiation biased annealing time. The transistors tested varied in size, radiation hardness, and process technology. The radiation-induced 1/f noise correlates strikingly with the oxide trap charge through irradiation and anneal, but not with interface-trap charge, for frequencies up to 10 kHz. This implies that oxide trapped charge is the predominant factor which leads to the increased 1/f noise in irradiated MOS devices

Keywords

annealing; electron device noise; hole traps; insulated gate field effect transistors; interface electron states; radiation effects; radiation hardening (electronics); random noise; 1/f noise; MOS transistors; interface-trap charge; oxide trap charge; postirradiation biased annealing time; process technology; radiation hardness; radiation-induced charge; total ionizing dose; Annealing; Bandwidth; Frequency; Laboratories; Low pass filters; MOS devices; MOSFET circuits; Noise measurement; Preamplifiers; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101179

Filename

101179