The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors

Author

Benedetto, J.M. ; Moore, R.A. ; McLean, F.B. ; Brody, P.S. ; Dey, S.K.

Author_Institution

Harry Diamond Labs., Adelphi, MD, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1713

Lastpage

1717

Abstract

Ferroelectric (FE) thin-film capacitors are irradiated to 100 Mrad(Si) with 10-keV X-rays. Some of the FE hysteresis loops show distortion at 5 Mrad(Si). The type and degree of distortion are dependent on the polarization state and/or the applied field during irradiation. Preliminary results indicate that a fraction of the radiation-induced damage can be removed simply by cycling the FE capacitor with a 20-kHz square wave. The amount of damage removed is dependent upon the radiation conditions

Keywords

X-ray effects; dielectric hysteresis; dielectric polarisation; ferroelectric storage; lead compounds; sol-gel processing; thin film capacitors; 10 keV; 10⁸ rad; PZT; PbZrO3TiO3; X-ray irradiation; applied field; ferroelectric hysteresis loops; ionizing radiation; polarization state; radiation-induced damage; sol-gel ferroelectric PZT capacitors; square wave cycling; Capacitors; Electrodes; Ferroelectric materials; Hysteresis; Ionizing radiation; Iron; Laboratories; Polarization; Transistors; Zirconium;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101181

Filename

101181