Predicting switched-bias response from steady-state irradiations MOS transistors

Author

Fleetwood, D.M. ; Winokur, P.S. ; Riewe, L.C.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1806

Lastpage

1817

Abstract

A novel semiempirical model of radiation-induced charge neutralization is presented. This model is combined with 12 heuristic guidelines derived from studies of oxide- and interface-trap charge (ΔV_ot and ΔV_it) buildup and annealing to develop a method to predict MOS switched-bias response from steady-state irradiations, with no free parameters. For n-channel MOS devices, predictions of ΔV_ot, ΔV_it, and mobility degradation differ from experimental values through irradiation by less than 30% in all cases considered. This is demonstrated for gate oxides with widely varying ΔV_ot and ΔV_it and for parasitic field oxides. Preliminary results suggest that n-channel MOS ΔV_ot annealing and ΔV_it buildup following switched-bias irradiation and through switched-bias annealing also may be predicted with less than 30% error. The p-channel MOS response at high frequencies (>1 kHz) is more difficult to predict

Keywords

X-ray effects; carrier mobility; hole traps; insulated gate field effect transistors; interface electron states; semiconductor device models; MOS transistors; MOST; X-ray irradiation; annealing; gate oxides; interface-trap charge; mobility degradation; n-channel MOS devices; oxide-trap charge buildup; p-channel MOS response; parasitic field oxides; radiation-induced charge neutralization; semiempirical model; steady-state irradiations; switched-bias response; trapped holes; Annealing; Circuit testing; Electron traps; Guidelines; Laboratories; MOS devices; MOSFETs; Predictive models; Steady-state; Switching circuits;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101194

Filename

101194