Design, simulation, and realization of solid state memory element using the weakly coupled GMR effect

Author

Wang, Zhi Gang ; Nakamura, Yoshihisa

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

Volume

32

Issue

2

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

520

Lastpage

526

Abstract

We found that in a weakly coupled giant magnetoresistive (GMR) sandwich the small-field response´s slope is dependent on its past magnetic history. Based on this storage mechanism, we designed a binary solid state memory element. Simulation results show that it operates on the general principle of storing a binary digit in the hard component and sensing nondestructively its remanent state by switching the soft component in such a way that the magnetic state of the hard component is unaltered, thereby causing a dramatic GMR polar readout. So far a 1-b experimental apparatus has been realized

Keywords

Permalloy; cobalt; copper; giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetoresistive devices; random-access storage; remanence; 1 bit; Co-NiFe-Cu-Co-NiFe; GMR polar readout; binary solid state memory element; giant magnetoresistive sandwich; hard component; magnetic history; remanent state; soft component switching; storage mechanism; weakly coupled GMR effect; Couplings; Giant magnetoresistance; History; Magnetic devices; Magnetic switching; Magnetization; Road transportation; Solid modeling; Solid state circuits; Turning;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.486542

Filename

486542