Title :
Understanding single event phenomena in complex analog and digital integrated circuits
Author :
Turflinger, Thomas L. ; Davey, Martin V.
Author_Institution :
US Naval Weapons Support Center, Crane, IN, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
Single event phenomena (SEP) responses of complex analog and digital integrated circuits (ICs) cannot be characterized using common (i.e. memory) techniques. An analysis technique for complex SEP response has been developed that allows system analysis for the data in order to increase confidence in their thoroughness. The resulting data are directly applicable to existing orbital error rate codes. The general analysis technique is the main thrust of this study. For a circuit with a complex SEP response, guidelines are established which allow a complete solution to the linear system by establishing relevant error categories, the raw error variables, and a method of error separation. When the data are presented in the framework of a complete linear system, the required independent analysis for system use can proceed with high confidence in the SEP data. The technique is used to analyze the SEP response of an analog-to-digital converter
Keywords :
analogue-digital conversion; digital integrated circuits; integrated circuit testing; ion beam effects; linear integrated circuits; analog-to-digital converter; analogue IC; complex SEP response; digital integrated circuits; error categories; error separation; ion beam irradiation; linear system; orbital error rate codes; raw error variables; single event phenomena; Analog-digital conversion; Bandwidth; Cranes; Data analysis; Digital integrated circuits; Equations; Frequency; High speed integrated circuits; Shape; Weapons;
Journal_Title :
Nuclear Science, IEEE Transactions on