Response of a DRAM to single-ion tracks of different heavy-ion species and stopping powers

Author

Zoutendyk, J.A. ; Smith, L.S. ; Edmonds, L.D.

Author_Institution

Jet Propulsionm Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1844

Lastpage

1848

Abstract

Multiple-bit errors caused by single-ion tracks in a 256-kb DRAM fabricated by a bulk process were observed for different ion species and stopping power values. The results demonstrate the utility of this device for the evaluation of ion-beam uniformity and ion-beam-induced charge collection in IC devices. The data indicate that single-ion-induced charge transport results in multiple-bit error clusters due to lateral diffusion of excess minority carriers (electrons). Charge collection occurred from a depth of up to 35 μm from te surface of the device. An apparent charge loss was observed for very heavy ions with a high stopping power (Au at 350 MeV)

Keywords

DRAM chips; energy loss of particles; integrated circuit testing; ion beam effects; 256 kbit; 96 to 350 MeV; DRAM; IC devices; heavy-ion species; ion-beam uniformity; ion-beam-induced charge collection; lateral diffusion; minority carriers; multiple bit errors; single-ion tracks; single-ion-induced charge transport; stopping powers; Capacitance; Computer hacking; Contracts; Electrons; Gold; Laboratories; MOS capacitors; NASA; Propulsion; Random access memory;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101199

Filename

101199