SEU characterization and design dependence of the SA3300 microprocessor

Author

Sexton, F.W. ; Treece, R.K. ; Hass, K.J. ; Hughes, K.L. ; Hash, G.L. ; Axness, C.L. ; Buchner, S.P. ; Kang, K.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1861

Lastpage

1868

Abstract

A detailed characterization is presented of the single-event upset (SEU) sensitivity of the SA3300 microprocessor focusing specifically on the internal general-purpose registers. SEU response is explored as a function of temperature and logic state of the registers. The effects of two different design variations on SEU vulnerability are outlined. Microprobe measurements using a pulsed Nd:YAG laser suggest that the observed pattern dependence for both design revisions is due to bipolar photocurrent in a vertical n⁺pn transistor. A slight temperature dependence was observed in both design revisions. This is consistent with the use of oversized restoring transistors to minimize SEU vulnerability rather than polysilicon feedback resistors. More recent data show threshold above 120 MeV-cm²/mg with 80-kΩ feedback resistors

Keywords

CMOS integrated circuits; integrated circuit testing; ion beam effects; laser beam effects; microprocessor chips; 16 bit; CMOS process; SA3300 microprocessor; SEU characterization; YAG:Nd; YAl5O12:Nd; bipolar photocurrent; design dependence; heavy ion tests; internal general-purpose registers; logic state; microprobe measurement; oversized restoring transistors; pattern dependence; polysilicon feedback resistors; pulsed Nd:YAG laser; single-event upset; temperature dependence; vertical n⁺pn transistor; Feedback; Logic; Microprocessors; Optical design; Optical pulses; Photoconductivity; Pulse measurements; Resistors; Single event upset; Temperature sensors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101202

Filename

101202