Title :
SEU characterization and design dependence of the SA3300 microprocessor
Author :
Sexton, F.W. ; Treece, R.K. ; Hass, K.J. ; Hughes, K.L. ; Hash, G.L. ; Axness, C.L. ; Buchner, S.P. ; Kang, K.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
A detailed characterization is presented of the single-event upset (SEU) sensitivity of the SA3300 microprocessor focusing specifically on the internal general-purpose registers. SEU response is explored as a function of temperature and logic state of the registers. The effects of two different design variations on SEU vulnerability are outlined. Microprobe measurements using a pulsed Nd:YAG laser suggest that the observed pattern dependence for both design revisions is due to bipolar photocurrent in a vertical n+pn transistor. A slight temperature dependence was observed in both design revisions. This is consistent with the use of oversized restoring transistors to minimize SEU vulnerability rather than polysilicon feedback resistors. More recent data show threshold above 120 MeV-cm2/mg with 80-kΩ feedback resistors
Keywords :
CMOS integrated circuits; integrated circuit testing; ion beam effects; laser beam effects; microprocessor chips; 16 bit; CMOS process; SA3300 microprocessor; SEU characterization; YAG:Nd; YAl5O12:Nd; bipolar photocurrent; design dependence; heavy ion tests; internal general-purpose registers; logic state; microprobe measurement; oversized restoring transistors; pattern dependence; polysilicon feedback resistors; pulsed Nd:YAG laser; single-event upset; temperature dependence; vertical n+pn transistor; Feedback; Logic; Microprocessors; Optical design; Optical pulses; Photoconductivity; Pulse measurements; Resistors; Single event upset; Temperature sensors;
Journal_Title :
Nuclear Science, IEEE Transactions on
