DocumentCode
768802
Title
Effects of Plasma Exposure on Magnetization of Ion-implanted Bubble Garnet
Author
Betsui, K. ; Miyashita, T. ; Komenou, K.
Author_Institution
Fujitsu Ltd.
Volume
2
Issue
3
fYear
1987
fDate
3/1/1987 12:00:00 AM
Firstpage
269
Lastpage
270
Abstract
Exposure to plasma results in an increase in the change in induced anisotropy field ¿Hk of ion-implanted garnet film. In this work, the change in saturation magnetization was also studied. Ne+ ions were implanted into (YSmLuCa)3 (GeFe)5 O12 film and then exposed to plasma. Whereas a linear decrease in saturation magnetization 4¿Ms with implantation dose was seen, plasma exposure caused an increase which was also proportional to the dose. The temperature dependence of 4¿Ms indicated that plasma exposure raised the Tc , which had fallen from 246°C to 180°C with implantation, back to 198°C. Occlusion of hydrogen in the plasma may be partially responsible for this behavior.
Keywords
Anisotropic magnetoresistance; Garnets; Hydrogen; Iron; Magnetics; Plasma applications; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Saturation magnetization;
fLanguage
English
Journal_Title
Magnetics in Japan, IEEE Translation Journal on
Publisher
ieee
ISSN
0882-4959
Type
jour
DOI
10.1109/TJMJ.1987.4549401
Filename
4549401
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