• DocumentCode
    768802
  • Title

    Effects of Plasma Exposure on Magnetization of Ion-implanted Bubble Garnet

  • Author

    Betsui, K. ; Miyashita, T. ; Komenou, K.

  • Author_Institution
    Fujitsu Ltd.
  • Volume
    2
  • Issue
    3
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    269
  • Lastpage
    270
  • Abstract
    Exposure to plasma results in an increase in the change in induced anisotropy field ¿Hk of ion-implanted garnet film. In this work, the change in saturation magnetization was also studied. Ne+ ions were implanted into (YSmLuCa)3 (GeFe)5 O12 film and then exposed to plasma. Whereas a linear decrease in saturation magnetization 4¿Ms with implantation dose was seen, plasma exposure caused an increase which was also proportional to the dose. The temperature dependence of 4¿Ms indicated that plasma exposure raised the Tc, which had fallen from 246°C to 180°C with implantation, back to 198°C. Occlusion of hydrogen in the plasma may be partially responsible for this behavior.
  • Keywords
    Anisotropic magnetoresistance; Garnets; Hydrogen; Iron; Magnetics; Plasma applications; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Saturation magnetization;
  • fLanguage
    English
  • Journal_Title
    Magnetics in Japan, IEEE Translation Journal on
  • Publisher
    ieee
  • ISSN
    0882-4959
  • Type

    jour

  • DOI
    10.1109/TJMJ.1987.4549401
  • Filename
    4549401