DocumentCode
768832
Title
A new method for using 252Cf in SEU testing [SRAM]
Author
Costantine, A. ; Howard, J.W. ; Becker, M. ; Block, R.C. ; Smith, L. S Ted ; Soli, G.A. ; Stauber, M.C.
Author_Institution
Rensselaer Polytech. Inst., Troy, NY, USA
Volume
37
Issue
6
fYear
1990
fDate
12/1/1990 12:00:00 AM
Firstpage
1916
Lastpage
1922
Abstract
A system using 252Cf and associated nuclear instrumentation has determined the single-event upset (SEU) cross section versus linear energy transfer (LET) curve for several 2 K×8 static random access memories (SRAMs). The 252Cf fission fragments pass through a thin-film organic scintillator detector (TFD) on the way to the device under test (DUT). The TFD provides energy information for each transiting fragment. Data analysis provides the energy of the individual ion responsible for each SEU; thus, separate upset cross sections can be developed for different energy and mass regions of the californium spectrum. This californium-based device is quite small and fits onto a bench top. It provides a convenient and inexpensive supplement or alternative to accelerator and high-altitude/space SEU testing
Keywords
CMOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; nuclear electronics; scintillation counters; 16 kbit; 252Cf; CMOS circuits; LET; SEU testing; SRAMs; device under test; fission fragments; linear energy transfer; nuclear instrumentation; single-event upset; static random access memories; thin-film organic scintillator detector; upset cross sections; Data analysis; Detectors; Energy exchange; Instruments; Ion accelerators; Life estimation; SRAM chips; Single event upset; Testing; Thin film devices;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.101209
Filename
101209
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