• DocumentCode
    768832
  • Title

    A new method for using 252Cf in SEU testing [SRAM]

  • Author

    Costantine, A. ; Howard, J.W. ; Becker, M. ; Block, R.C. ; Smith, L. S Ted ; Soli, G.A. ; Stauber, M.C.

  • Author_Institution
    Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    37
  • Issue
    6
  • fYear
    1990
  • fDate
    12/1/1990 12:00:00 AM
  • Firstpage
    1916
  • Lastpage
    1922
  • Abstract
    A system using 252Cf and associated nuclear instrumentation has determined the single-event upset (SEU) cross section versus linear energy transfer (LET) curve for several 2 K×8 static random access memories (SRAMs). The 252Cf fission fragments pass through a thin-film organic scintillator detector (TFD) on the way to the device under test (DUT). The TFD provides energy information for each transiting fragment. Data analysis provides the energy of the individual ion responsible for each SEU; thus, separate upset cross sections can be developed for different energy and mass regions of the californium spectrum. This californium-based device is quite small and fits onto a bench top. It provides a convenient and inexpensive supplement or alternative to accelerator and high-altitude/space SEU testing
  • Keywords
    CMOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; nuclear electronics; scintillation counters; 16 kbit; 252Cf; CMOS circuits; LET; SEU testing; SRAMs; device under test; fission fragments; linear energy transfer; nuclear instrumentation; single-event upset; static random access memories; thin-film organic scintillator detector; upset cross sections; Data analysis; Detectors; Energy exchange; Instruments; Ion accelerators; Life estimation; SRAM chips; Single event upset; Testing; Thin film devices;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.101209
  • Filename
    101209