Ionizing radiation effects on HgCdTe MIS devices

Author

Moriwaki, M.M. ; Srour, J.R. ; Lou, L.F. ; Waterman, J.R.

Author_Institution

Northrop Electron. Syst. Div., Hawthorne, CA, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

2034

Lastpage

2041

Abstract

Total-dose irradiations of HgCeTe MIS capacitors containing an anodic-sulfide interface passivation layer reveal electron and hole trapping in the insulator and irradiation-bias dependences of flatband voltage shift, interface trap density, surface generation velocity, and storage time. Under positive irradiation bias, charge buildup in the insulator is dominated by trapped holes. Isochronal annealing studies reveal nearly complete recovery of the flatband voltage at ~275 K for an irradiation to 10⁵ rad(Si) at ~80 K. Significant neutralization of trapped holes is evident if the applied bias is changed during irradiation

Keywords

II-VI semiconductors; gamma-ray effects; infrared detectors; mercury compounds; metal-insulator-semiconductor devices; radiation hardening (electronics); 1E5 rad; 275 K; 80 K; ⁶⁰Co gamma radiation; HgCdTe; HgCeTe MIS capacitors; anodic-sulfide interface passivation layer; charge buildup; electron trapping; flatband voltage recovery; flatband voltage shift; hole trapping; interface trap density; ionizing radiation effects; irradiation-bias dependences; isochronal annealing; neutralization of trapped holes; positive irradiation bias; semiconductors; storage time; surface generation velocity; total dose irradiations; trapped holes; Capacitance-voltage characteristics; Capacitors; Electron traps; Infrared detectors; Insulation; Ionizing radiation; Laboratories; MIS devices; Voltage; Zinc compounds;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101226

Filename

101226