Effects of Ar Pressure and Substrate Bias on TbCo Sputtered Films

The effect of Ar pressure on the magnetic characteristics and structure of TbCo sputtered film was studied using bias voltages of 0, -50, and -100 V as parameters. In zero bias films, varying the Ar pressure caused different types of stress (tensile or compressive) as well as structural changes in these films. The Tb atomic density in the films made while alternating the bias voltage between 0 and -100 V was modulated, and these modulated films had perpendicular magnetization characteristics.