Realization and wafer test of InGaAsP/InP DFB laser/monitor OEICs

Author

Dütting, K. ; Idler, W. ; Bouayad-Amine, J. ; Mayer, H.P. ; Wünstel, K.

Author_Institution

SEL-ALCATEL Res. Centre, Stuttgart, Germany

Volume

4

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

250

Lastpage

252

Abstract

Wafer-testable distributed feedback (DFB) lasers and monolithically integrated monitor diodes are realized to replace the time consuming and expensive single-chip test procedure in semiconductor laser fabrication process. Laser-end facets and integrated monitor diodes are defined on 1.5- mu m InGaAsP/InP multiple quantum well (MQW) DFB laser wafers by reactive ion beam etching (RIBE). Using terminal electrical noise (TEN) measurement, the lasers are characterized directly on the wafer with respect to threshold current and single mode operation. Threshold currents down to 10 mA have been achieved for the integrated devices.<>

Keywords

III-V semiconductors; distributed feedback lasers; electron device noise; gallium arsenide; indium compounds; integrated optoelectronics; optical workshop techniques; semiconductor device testing; semiconductor junction lasers; sputter etching; 1.5 micron; 10 mA; DFB laser monitor OEIC; III-V semiconductor; InGaAsP-InP; MQW DFB laser wafers; integrated monitor diodes; laser end facets; monolithically integrated monitor diodes; reactive ion beam etching; single mode operation; terminal electrical noise; threshold current; wafer test; Distributed feedback devices; Indium phosphide; Laser feedback; Laser modes; Laser noise; Monitoring; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Testing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.122382

Filename

122382