InP-InGaAsP high-speed traveling-wave electroabsorption modulators with integrated termination resistors

Author

Irmscher, S. ; Lewen, R. ; Eriksson, U.

Author_Institution

Lab. of Photonics & Microwave Eng., R. Inst. of Technol., Kista, Sweden

Volume

14

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

923

Lastpage

925

Abstract

Traveling-wave electroabsorption modulators for operation at 1.55 μm have been designed and fabricated. Devices of different lengths were characterized. Modulators with integrated termination resistors showed wide modulation bandwidths and excellent bandwidth-length products. A bandwidth of 43 GHz was measured for a 450-μm-long device, which corresponds to a 19.3-GHz/spl middot/mm bandwidth length product. For a device length of 250 μm, a bandwidth of 67 GHz is extrapolated from measurements up to 45 GHz.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical design techniques; optical fabrication; resistors; 1.55 micron; 250 micron; 43 GHz; 450 micron; 67 GHz; InP-InGaAsP; InP-InGaAsP high-speed traveling-wave electroabsorption modulators; bandwidth-length products; integrated termination resistors; modulation bandwidths; optical design; optical fabrication; Bandwidth; High speed optical techniques; Impedance; Indium phosphide; Length measurement; Optical losses; Optical modulation; Optical resonators; Optical waveguides; Resistors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1012386

Filename

1012386