Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes

Author

Ran Wei ; Dries, J.C. ; Hongsheng Wang ; Lange, M.L. ; Olsen, G.H. ; Forrest, S.R.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

14

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

977

Lastpage

979

Abstract

We demonstrate long-wavelength (/spl lambda/ = 1.3 and 1.5 μm) high-speed (10 Gb/s) InGaAs-InP separate absorption-grading-and-multiplication region avalanche photodiodes (SAGM-APDs) employing a double diffused floating guard ring (FGR) structure to eliminate edge breakdown. The simple /spl ges/ 60-GHz gain-bandwidth product double diffused FGR structure was optimized using theoretical and experimental studies. The APD excess noise factor was measured, and suggests that dead-length effects must be considered in designing high bandwidth devices with thin multiplication layers.

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical receivers; semiconductor device breakdown; semiconductor device noise; 1.3 micron; 1.5 micron; 10 Gbit/s; 10-Gb/s long-wavelength floating guard ring optimization; InGaAs-InP; InGaAs-InP SAGM-APDs; dead-length effects; double diffused floating guard ring structure; edge breakdown elimination; excess noise factor; gain-bandwidth product; high bandwidth device design; optical receivers; separate absorption-grading-and-multiplication region; thin multiplication layers; Absorption; Avalanche breakdown; Avalanche photodiodes; Bandwidth; Electric breakdown; Indium gallium arsenide; Indium phosphide; Noise measurement; Optical noise; Tunneling;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1012404

Filename

1012404