• DocumentCode
    770525
  • Title

    Lateral ion implant straggle and mask proximity effect

  • Author

    Hook, Terence B. ; Brown, J. ; Cottrell, Peter ; Adler, Eric ; Hoyniak, Dennis ; Johnson, Jim ; Mann, Randy

  • Author_Institution
    Semicond. R&D Center, IBM Microelectron., Essex Junction, VT, USA
  • Volume
    50
  • Issue
    9
  • fYear
    2003
  • Firstpage
    1946
  • Lastpage
    1951
  • Abstract
    Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.
  • Keywords
    MOSFET; ion implantation; isolation technology; masks; proximity effect (lithography); secondary ion mass spectra; NMOSFET; PMOSFET; SIMS; SUPREM4 simulation; electrical characteristics; lateral ion implant straggle; lateral scattering; mask proximity effect; retrograde well; threshold voltage; triple-well isolation; Boron; CMOS technology; Implants; MOSFETs; Proximity effect; Resists; Scattering; Semiconductor device doping; Silicon; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.815371
  • Filename
    1224497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=770525