• DocumentCode
    770801
  • Title

    Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography

  • Author

    Wong, W.S. ; Ready, S.E. ; Jeng-Ping Lu ; Street, R.A.

  • Author_Institution
    Palo Alto Res. Center, CA, USA
  • Volume
    24
  • Issue
    9
  • fYear
    2003
  • Firstpage
    577
  • Lastpage
    579
  • Abstract
    A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 × 64 pixel (300 μm pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of /spl sim/3.5 V, carrier mobility of 0.7 cm2/V/spl middot/s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10/sup 8/.
  • Keywords
    amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; lithography; silicon; thin film transistors; 3.5 V; 300 micron; 64 pixel; Si:H; active matrix array; carrier mobility; digital lithography; hydrogenated amorphous silicon thin film transistor; jet printing; on/off ratio; subthreshold slope; threshold voltage; Amorphous silicon; Biomedical imaging; Etching; Ink jet printing; Liquid crystal displays; Lithography; Materials processing; Thin film devices; Thin film transistors; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2003.815939
  • Filename
    1224523
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=770801