A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

Author

Song, In-Hyuk ; Kang, Su-Hyuk ; Nam, Woo-Jin ; Han, Min-Koo

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

24

Issue

9

fYear

2003

Firstpage

580

Lastpage

582

Abstract

A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-quality grain structure. The dual-gate structure was employed to eliminate the grain boundaries perpendicular to the current flow in the channel. A multichannel structure was adapted in order to arrange the grain boundary to be parallel to the current flow. The proposed poly-Si TFT exhibits high-performance electrical characteristics, which are a high mobility of 504 cm/sup 2//Vsec and a low subthreshold slope of 0.337 V/dec.

Keywords

carrier mobility; elemental semiconductors; grain boundaries; grain growth; laser beam annealing; silicon; thin film transistors; Si; carrier mobility; electrical characteristics; excimer laser annealing; floating amorphous silicon thin film; grain boundary; lateral grain structure; multichannel dual-gate structure; multichannel structure; polysilicon thin film transistor; subthreshold slope; two-dimensional grain growth; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Annealing; Flat panel displays; Grain boundaries; Grain size; Substrates; Temperature; Thermal conductivity; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.816586

Filename

1224524