DocumentCode :
770893
Title :
A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET
Author :
Ang, D.S. ; Ling, C.H.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
24
Issue :
9
fYear :
2003
Firstpage :
598
Lastpage :
600
Abstract :
In deep submicrometer N-MOSFET, a "backdrop" of substantial defect generation by the quasi-static V/sub g/=V/sub d/ stress phase is shown to significantly influence the accuracy of interpretation of ac stress data. If neglected, a severe overestimation of ac stress induced degradation would result. Through an approach that eliminates this damage component from the overall ac stress damage, increased parametric shifts, associated with the gate pulse transition phase, are found to occur in different time windows, delineated by the relative importance of hot-hole and hot-electron induced damage at different stages of the stress, the interaction between the two damages at specific stages of the stress, as well as the sensitivities of the device parameters to the spatial evolution of the two damages.
Keywords :
MOSFET; hot carriers; AC hot carrier degradation; deep-submicron LDD N-MOSFET; defect generation; quasi-static stress; AC generators; Clocks; Degradation; Electron traps; Hot carriers; Interface states; MOSFET circuits; Secondary generated hot electron injection; Stress; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2003.815942
Filename :
1224530
Link To Document :
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