• DocumentCode
    771083
  • Title

    Extended-wavelength InGaAs-on-GaAs infrared focal-plane array

  • Author

    Merken, P. ; Zimmermann, L. ; John, J. ; Borghs, G. ; Van Hoof, C. ; Nemeth, S.

  • Author_Institution
    MCP Div., IMEC, Leuven, Belgium
  • Volume
    38
  • Issue
    12
  • fYear
    2002
  • fDate
    6/6/2002 12:00:00 AM
  • Firstpage
    588
  • Lastpage
    590
  • Abstract
    A 320 × 256 element hybrid infrared array is presented which consists of In0.78Ga0.22As photodiodes grown by molecular beam epitaxy on a GaAs substrate. The interconnection yield of the hybrid indium-bump process is above 97%. Electro-optical sensor characteristics are discussed
  • Keywords
    III-V semiconductors; focal planes; gallium arsenide; indium compounds; semiconductor epitaxial layers; InGaAs-GaAs; electro-optical sensor characteristics; hybrid indium-bump process; hybrid infrared array; infrared focal-plane array; interconnection yield; molecular beam epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020402
  • Filename
    1012901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=771083