Title :
1.35 μm intersubband transition in InGaAs/AlAsSb single quantum wells
Author :
Gopal, A.V. ; Yoshida, H. ; Mozurne, T. ; Simoyama, T. ; Ishikawa, H.
Author_Institution :
Femtosecond Technol. Res. Assoc., Tsukuba, Japan
fDate :
6/6/2002 12:00:00 AM
Abstract :
Room temperature, polarisation resolved absorption spectral measurements on InGaAs/AlAs/AlAsSb single quantum wells to report an intersubband absorption peak at a wavelength as short as 1.35 μm are presented. The observed absorption peak covers the communication wavelength range of 1.2 to 1.6 pm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor quantum wells; 1.35 micron; InGaAs-AlAsSb; InGaAs/AlAsSb single quantum well; intersubband transition; optical communication; room temperature polarisation resolved absorption spectra;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020390
