• DocumentCode
    771284
  • Title

    Novel HEMT layout: the RoundHEMT

  • Author

    Marso, M. ; Schimpf, K. ; Fox, A. ; van der Hart, A. ; Hardtdegen, H. ; Hollfelder, M. ; Kordos, P. ; Lüth, H.

  • Author_Institution
    Inst. fur Schicht- und Ionentechnik, Forschungszentrum Julich GmbH, Germany
  • Volume
    31
  • Issue
    7
  • fYear
    1995
  • fDate
    3/30/1995 12:00:00 AM
  • Firstpage
    589
  • Lastpage
    591
  • Abstract
    A novel HEMT layout with ringshaped gate is reported. This conception avoids the problems related to mesa etching at the active region and provides additional possibilities for circuit design. The layer structure of the investigated device is based on an Al-free InP/InGaAs material system. Transistors with a gate length of 0.7 μm show an fT of 40 GHz and an fmax of 117 GHz. These values are similar to results obtained with the conventional HEMT design
  • Keywords
    high electron mobility transistors; microwave field effect transistors; 0.7 micron; 117 GHz; 40 GHz; HEMT layout; InP-InGaAs; RoundHEMT; ringshaped gate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950367
  • Filename
    381779
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=771284