• DocumentCode
    771475
  • Title

    Wavelength shift in vertical cavity laser arrays on a patterned substrate

  • Author

    Eng, L.E. ; Bacher, K. ; Yuen, W. ; Larson, M. ; Ding, G. ; Harris, J.S., Jr ; Chang-Hasnain, C.J.

  • Author_Institution
    Edward L. Ginzton Lab., Stanford Univ., CA, USA
  • Volume
    31
  • Issue
    7
  • fYear
    1995
  • fDate
    3/30/1995 12:00:00 AM
  • Firstpage
    562
  • Lastpage
    563
  • Abstract
    The authors demonstrate a spatially chirped emission wavelength in vertical cavity surface emitting laser (VCSEL) arrays grown by molecular beam epitaxy. The wavelength shift is due to a lateral thickness variation in the Al0.2Ga0.8As cavity, which is induced by a substrate temperature profile during growth. A 20 nm shift in lasing wavelength is obtained in a VCSEL array
  • Keywords
    molecular beam epitaxial growth; quantum well lasers; semiconductor growth; semiconductor laser arrays; surface emitting lasers; Al0.2Ga0.8As; VCSEL array; lasing wavelength; lateral thickness variation; molecular beam epitaxy; patterned substrate; spatially chirped emission wavelength; substrate temperature profile; vertical cavity laser arrays; wavelength shift;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950368
  • Filename
    381797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=771475