Precise Facet Temperature Distribution of High- Power Laser Diodes: Unpumped Window Effect

Author

Michaud, Jeremy ; Del Vecchio, Pamela ; Bechou, Laurent ; Veyrie, David ; Bettiati, Mauro Andrea ; Laruelle, Francois ; Grauby, Stephane

Author_Institution

Lab. Ondes et Mater. d´Aquitaine, Univ. de Bordeaux, Talence, France

Volume

27

Issue

9

fYear

2015

fDate

May1, 1 2015

Firstpage

1002

Lastpage

1005

Abstract

A thermoreflectance technique is used to evaluate the temperature variations at the output facet of high-power GaAs-based laser diodes emitting at 980 nm. Two kinds of diodes with different unpumped windows (UPWs) are studied to determine the influence of UPW length on the temperature variation. We show that in the vicinity of the active region, where a catastrophic optical damage is most susceptible to occur, the short UPW diode heats much more (up to 40%) than the long UPW one.

Keywords

III-V semiconductors; gallium arsenide; quantum well lasers; temperature distribution; thermoreflectance; GaAs; active region; catastrophic optical damage; high-power GaAs-based laser diodes; output facet; precise facet temperature distribution; thermoreflectance technique; unpumped window effect; wavelength 980 nm; Diode lasers; Heating; Measurement by laser beam; Probes; Reflectivity; Semiconductor lasers; Temperature measurement; Catastrophic optical degradation; catastrophic optical degradation; facet temperature variation; laser diode; unpumped window; unpumped window.;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2405090

Filename

7047700