Study of Energy Levels in High Energy Proton Damaged Silicon

The electrical nature of defects introduced in n-and p-type silicon by 10 to 40 Mev proton bombardment has been investigated by Hall effect and compared to defects resulting from electron damage. Evidence of three types of electrically active defects is presented. The defects are (a) a net acceptor at EC-0.17 ev, (b) a net acceptor at EC-0.4 ev, and (c) a net donor at Ev+0.29 ev. These defects appear to be identical to those previously reported for high energy electron damaged silicon. The damage introduction rates are estimated and found to be considerably larger than values reported for production of such defects by energetic electrons.