• DocumentCode
    772113
  • Title

    New a-SiC, optically controlled, thyristor-like switch

  • Author

    Dimitriadis, E.I. ; Geogoulas, N. ; Thanailakis, A.

  • Author_Institution
    Democritus Univ. of Thrace, Xanthi, Greece
  • Volume
    28
  • Issue
    17
  • fYear
    1992
  • Firstpage
    1622
  • Lastpage
    1624
  • Abstract
    A new multilayer a-SiC thin film based switch was successfully fabricated and studied for the first time. The device has a forward breakover voltage VBF=140 V and exhibits a reversible decrease of VBF with increasing illumination intensity. The behaviour of this switch is analogous to that of a thyristor.
  • Keywords
    amorphous semiconductors; photoelectric devices; semiconductor switches; silicon compounds; thyristors; 140 V; forward breakover voltage; illumination intensity; multilayer amorphous SiC thin film; optically controlled thyristor like switch; optoelectronic applications; photosensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921032
  • Filename
    156290