A Simple Subthreshold CMOS Voltage Reference Circuit With Channel- Length Modulation Compensation

Author

Huang, Po-Hsuan ; Lin, Hongchin ; Lin, Yen-Tai

Author_Institution

Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung

Volume

53

Issue

9

fYear

2006

Firstpage

882

Lastpage

885

Abstract

This brief presents a simple reference circuit with channel-length modulation compensation to generate a reference voltage of 221 mV using subthreshold of MOSFETs at supply voltage of 0.85 V with power consumption of 3.3 muW at room temperature using TSMC 0.18-mum technology. The proposed circuit occupied in less than 0.0238 mm ² achieves the reference voltage variation of 2 mV/V for supply voltage from 0.9 to 2.5V and about 6 mV of temperature variation in the range from -20degC to 120 degC. The agreement of simulation and measurement data is demonstrated

Keywords

CMOS integrated circuits; reference circuits; -20 to 120 C; 0.18 micron; 0.9 to 2.5 V; 221 mV; 3.3 muW; MOSFET; channel-length modulation compensation; subthreshold CMOS voltage reference circuit; Circuit analysis; Circuit simulation; Energy consumption; Equations; MOSFETs; Power generation; Power supplies; Resistors; Temperature distribution; Threshold voltage; Compensation; channel-length modulation; reference voltage; subthreshold;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2006.881813

Filename

1705059