• DocumentCode
    772240
  • Title

    Advantages of InGaAsP separate confinement layer in 0.98 mu m InGaAs/GaAs/InGaP strained DOW lasers for high power operation at high temperature

  • Author

    Sagawa, M. ; Hiramoto, K. ; Tsuchiya, T. ; Tsuji, S. ; Uomi, K.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    28
  • Issue
    17
  • fYear
    1992
  • Firstpage
    1639
  • Lastpage
    1640
  • Abstract
    The advantages of 0.98 mu m InGaAs/GaAs/InGaP lasers with an InGaAsP SCH layer were investigated by comparing them with identical lasers with a conventional GaAs SCH layer. A higher internal quantum efficiency of 0.817 and low internal loss of 2.11 cm-1 were obtained due to the large conduction band discontinuity. Moreover, high power operation of 80 mW from an uncoated facet was obtained up to 70 degrees C with the laser with the InGaAsP SCH layer.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 0.98 micron; 70 degC; 80 mW; InGaAs-GaAs-InGaP lasers; InGaAsP separate confinement layer; SCH layer; conduction band discontinuity; high power operation; high temperature; internal loss; internal quantum efficiency; strained DOW lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921043
  • Filename
    156301
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=772240